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A high‐performance selector is critical for X‐point high density memory chips. In article number 1900024, Huaqiang Wu, Bin Gao, Peng Zhou, and co‐workers present a threshold switching selector based on… Click to show full abstract
A high‐performance selector is critical for X‐point high density memory chips. In article number 1900024, Huaqiang Wu, Bin Gao, Peng Zhou, and co‐workers present a threshold switching selector based on highly‐ordered Ag nanodots that can provide sufficiently large RESET current (≈2.3 mA) and extremely high selectivity (>109). Limited Ag migration into electrolyte and multiple weak Ag filaments formation/rupture contribute to the enhanced selector performance. Such a high‐performance threshold switching selector may thus lead to innovative applications in circuits and systems, especially for X‐point memory applications.
Journal Title: Advanced Science
Year Published: 2019
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