LAUSR

Stability and scalability are essential and urgent requirements for the commercialization of perovskite solar cells (PSCs), which are retarded by the non-ideal interface leading to non-radiative recombination and degradation. Extensive efforts are devoted to reducing the defects at the perovskite surface. However, the effects of the buried interface on the degradation and non-radiative recombination need to be further investigated. Herein, an omnibearing strategy to modify buried and top surfaces of perovskite film to reduce interfacial defects, by incorporating aluminum oxide (Al2 O3 ) as a dielectric layer and growth scaffolds (buried surface) and phenethylammonium bromide as a passivation layer (buried and top surfaces), is demonstrated. Consequently, the open-circuit voltage is extensively boosted from 1.02 to 1.14 V with the incorporation of Al2 O3 filling the voids between grains, resulting in dense morphology of buried interface and reduced recombination centers. Finally, the impressive efficiencies of 23.1% (0.1 cm2 ) and 22.4% (1 cm2 ) are achieved with superior stability, which remain 96% (0.1 cm2 ) and 89% (1 cm2 ) of its initial performance after 1200 (0.1 cm2 ) and 2500 h (1 cm2 ) illumination, respectively. The dual modification provides a universal method to reduce interfacial defects, revealing a promising prospect in developing high-performance PSCs and modules.