LAUSR

Recent progress in the development of organic semiconductor materials has improved the performance of both p- and n-type transistors. Currently, it is anticipated that the next step in the evolution of electronics will be to establish a reliable fabrication technique for integrated electronic devices such as plastic sensor films and radio-frequency identification (RFID) tags. Herein, a new fabrication process to grow line-shaped organic single-crystalline films with widths on the order of one mm is reported. To realize large-scale complementary logic circuits, it is necessary to precisely control the growth conditions of p-type and n-type semiconductors when painting on different areas on the same substrate. This method makes it possible to fabricate highly oriented organic thin films elongated over a few millimeters for both p- and n-type semiconductors next to one another. The p-type and n-type semiconductor crystals grown by this technique exhibit excellent average mobilities of 4.9 cm2 V–1 s–1 and 0.16 cm2 V–1 s–1 respectively. A prototypical RFID tag based on single crystals fabricated with the presented technique is also demonstrated. This tag was able to transfer 4-bit digital signals including the information from a temperature sensor through near-field wireless communication at the commercially usable frequency of 13.56 MHz.