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A Wide Band Gap Naphthalene Semiconductor for Thin‐Film Transistors

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This study reports a new simple organic semiconductor 2,6-bis(4-methoxyphenyl)naphthalene (BOPNA) with unprecedentedly large band gap of 3.35 eV and an apparent hole mobility of ≈1 cm2 V–1 s–1 measured in… Click to show full abstract

This study reports a new simple organic semiconductor 2,6-bis(4-methoxyphenyl)naphthalene (BOPNA) with unprecedentedly large band gap of 3.35 eV and an apparent hole mobility of ≈1 cm2 V–1 s–1 measured in thin-film organic field-effect transistors in a saturation regime. This large band gap leads to complete optical transparency in the visible range (>370 nm), very high stability and independence of the device current with illumination conditions; this is in contrasts to the behavior of common organic semiconductors that have the band gap in the visible or near-IR range of the spectrum. Crystal structure of BOPNA reveals a highly isotropic electronic coupling in two directions of a herringbone-packing plane. A uniform, nearly single crystalline morphology can be achieved in highly crystalline BOPNA films through a rapid thermal annealing. Temperature-dependent studies reveal increase of the hole mobility as the temperature is reduced from +25 to –25 °C, suggesting a band-like transport, followed by a nearly temperature-independent mobility down to at least –150 °C.

Keywords: semiconductor; band gap; thin film

Journal Title: Advanced electronic materials
Year Published: 2017

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