LAUSR

Ternary resistive random access memory (RRAM) devices are fabricated from 1D d-π conjugated coordination polymer chains, which are synthesized via the coordination between Ni(II) salts and benzenetetramine or 3,3′,4,4′-biphenyltetramine in a solution process. The as-fabricated devices can retain their memory states for as long as three months at room temperature or work for at least 10 000 s at 150 °C, which is the highest working temperature reported for a ternary RRAM at the time of writing this paper. Thermogravimetric analysis indicates good thermal stability of these two materials because of their good crystallinity and strong intermolecular interaction. The long-term and high-temperature stability makes 1D conjugated coordination polymer chains a promising candidate for use as next-generation material for high-density data storage via RRAM techniques.