LAUSR

A comprehensive understanding of resistive switching phenomenon and its dependence on molecular structure is imperative for enhancing the consistency and reliability of organic resistive memory (ORM) devices. Here, the efforts are directed to establish a premise for providing detailed insights into the molecular property, thin film assembly, and digital memory performance of a 1,4‐dihydropyrrolo[3,2‐b]pyrrole (DHPP) derivative. The fabricated devices display switching characteristics with an ION/OFF ratio of ≈105, howbeit, with a temporary remanence of ≈2 min. The ON state can be sustained under a constant electrical duress of −1 V and can be repeatedly reprogrammed for >110 cycles. Conductive atomic force microscope (C‐AFM) studies demonstrate that the thin film can be electrically written to a 0 or 1 state under extremely low compliance currents of ±250 pA with an appreciable ON/OFF ratio of 102. Conservative estimates for the switching area of ≈150 nm2 with energy as low as 15 fJ to induce a switching event underscore the possibility of nanoscale data storage with high areal density. The role of charge transfer interactions during the OFF to ON transitions and the origin of volatile memory behaviour are further elucidated in conjunction with electrochemical impedance studies (EIS) and theoretical simulations.