LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions

Photo by kellysikkema from unsplash

Financial support from the Spanish Government, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV‐2015‐0496) and the MAT2017‐85232‐R, MAT2014‐56063‐C2‐1‐R, and MAT2015‐73839‐JIN projects, and from Generalitat de Catalunya… Click to show full abstract

Financial support from the Spanish Government, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV‐2015‐0496) and the MAT2017‐85232‐R, MAT2014‐56063‐C2‐1‐R, and MAT2015‐73839‐JIN projects, and from Generalitat de Catalunya (2017 SGR 1377) was acknowledged. M.Q. was financially supported by China Scholarship Council (CSC) with Grant No. 201406890019. M.Q. work was done as a part of her Ph.D. program in Materials Science at Universitat Autonoma de Barcelona. I.F. acknowledges Ramon y Cajal contract RYC‐2017‐22531. The authors thank Dr. Neus Domingo for the use of PFM equipment.

Keywords: asymmetric resistive; batio3 tunnel; tunnel junctions; switching dynamics; dynamics batio3; resistive switching

Journal Title: Advanced Electronic Materials
Year Published: 2018

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.