LAUSR

High‐performance bottom‐gate nonvolatile organic field‐effect transistor (OFET) devices based on a special matching energy‐band alignment between the organic semiconductor pentacene and the charge‐trapping dielectric ZnTe are reported. The lower potential difference between the conduction band minimum of ZnTe and the lowest unoccupied molecular orbital of pentacene with a weak electron conductivity endows the OFET a memory window of 10 V at an applied sweeping gate‐voltage of ±15 V, a high ION/IOFF ratio of more than 106, and good retention with a high ION/IOFF ratio of 6 × 105 after 104 s. The large memory window of the OFET is attributed to the unique energy‐band alignment of the memory device and the high density of traps in Te‐deficient ZnTe film, and the prominent retention is attributed to the deeply trapped electrons in the potential well formed by Al2O3 tunneling and blocking layers.