Photo by kellysikkema from unsplash
An interlaced textile structure has been employed to design a transparent p-n junction-based photodetector. The device consisting of aligned n-SnO2 and p-NiO nanofibers was prepared via a mature electro-spinning process… Click to show full abstract
An interlaced textile structure has been employed to design a transparent p-n junction-based photodetector. The device consisting of aligned n-SnO2 and p-NiO nanofibers was prepared via a mature electro-spinning process which is suitable for commercial applications. The photodetector showed a high detectivity of 2.33*1013 Jones under 250 nm illumination at -5 V, which outperformed most of the state-of-art SnO2-based UV photodetectors. It was also endowed with a self-powered feature due to a photovoltaic effect from the p-n junction, resulting in a photocurrent of 10-10 A, responsivity of 30.29 mA·W-1 at 0 V bias and detectivity of 2.24*1011 Jones at 0.05 V bias. Moreover, the device was highly transparent (over 90 % towards visible light) due to the wide band gap of photoactive materials and well-designed interlaced fibers structure.
Journal Title: Advanced electronic materials
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!