LAUSR

Layered hafnium diselenide (HfSe2) is an emerging Van der Waals semiconductor in which a hafnium layer is sandwiched between two selenium layers. Owning to its indirect band gap with magnitudes close to silicon's band gap and high predicted carrier mobility, hafnium diselenide material is a strong candidate for device applications. Here, the effect of laser treatment on 2H‐ HfSe2 devices is shown in ambient conditions using µ‐Raman spectroscopy. It is shown that an emerging Raman peak evolves with increasing laser exposure time. It is also shown that top‐down fabricated 2H‐HfSe2 devices exhibit an anomalous p‐type behavior post laser treatment, with Ion/Ioff ratio as high as 103. This anomalous conductivity change can be observed after thermal and electrical annealing. For bottom‐up devices, it is observed that p‐type conductivity with remarkable Ion/Ioff ratio reaching 104. This conductivity switch can also be shown on 1T‐HfSe2 devices post laser irradiation and high Vds bias treatments. Based on the circuit model, this conductivity switch is attributed to contact doping caused by an increase in the Schottky barrier height at each contact, which shifts the Fermi energy closer to the valance band. These results demonstrate a unique conductivity switching mechanism for HfSe2‐FET devices.