LAUSR

Gallium selenide (GaSe), a layered semiconductor of Group‐III monochalcogenides, has been recognized by the scientific community in recent years as an appealing material in the fields of photonics and (opto)electronics. Thanks to its pseudodirect bandgap and its thickness‐dependent (opto)electronic properties, GaSe has emerged as a promising candidate for the implementation of thin‐film transistors (TFTs) and photodetectors with fast response and high sensitivity. Solution processing of 2D materials provides low‐cost inks that allow the design and realization of printed electronic devices, enabling this technology to move from the laboratory to the industry. In this work, a solution‐processed GaSe‐based light‐driven transistor is presented. Liquid phase exfoliation (LPE) is used to exfoliate bulk GaSe in isopropanol, formulating a functional ink that is subsequently deposited by spray coating onto Si/SiO2 substrates. The GaSe phototransistor exhibits a p‐channel behavior with a high on/off ratio (≈103) that is gate‐voltage dependent. Moreover, the device response also depends on the illumination with a maximum responsivity of 13 A W–1 to UV–visible light and a fast response time of 35 ms. This study demonstrates that liquid phase exfoliated GaSe is a promising candidate for the design and realization of next‐generation (opto)electronic devices.