LAUSR

In this work, a compact model for mushroom‐type phase‐change memory devices is introduced that incorporates the shape and size of the amorphous mark under different programming conditions, and is applicable to both projecting and non‐projecting devices. The model includes analytical equations for the amorphous and crystalline regions and uniquely features a current leakage path that injects current at the outer edge of the electrodes. The results demonstrate that accurately modeling the size and shape of the phase configurations is crucial for predicting the full‐span of the RESET and SET programming, including the characteristics of threshold switching. Additionally, the model effectively captures read‐out behaviors, including the dependence of resistance drift and bipolar current asymmetry behaviours on the phase configurations. The compact model is also provided in Verilog–A format, so it can be easily used in standard circuit‐level simulation tools.