Editorial Advisory Board: Alexander Leonidovich Aseev, Institute of Semiconductor Physics, Novosibirsk Wolf Assmuss, Johann Wolfgang Goethe-Universität Frankfurt am Main Ladislav Bohatý, Universität zu Köln Hanna A. Dabkowska,McMaster University, Hamilton David… Click to show full abstract
Editorial Advisory Board: Alexander Leonidovich Aseev, Institute of Semiconductor Physics, Novosibirsk Wolf Assmuss, Johann Wolfgang Goethe-Universität Frankfurt am Main Ladislav Bohatý, Universität zu Köln Hanna A. Dabkowska,McMaster University, Hamilton David C. Johnson, University of Oregon, Eugene, OR Koichi Kakimoto, Kyushu University, Kasuga Philomela Komninou, Aristotle University of Thessaloniki Mario Lanza, King Abdullah University of Science and Technology, Thuwal Hong Liu, Shandong University, Jinan Dirk C. Meyer, Technische Universität Bergakademie Freiberg Peter Moeck, Portland State University, OR Christo Nanaev, Bulgarian Academy of Sciences, Sofia Jan Neethling, Nelson Mandela Metropolitan University, Port Elizabeth Massimo Nespolo, Université de Lorraine, Vandoeuvre-lès-Nancy Jolanta Prywer, Tecnical University of Łodź Peter Rudolph, Crystal Technology Consulting, Schönefeld Zulipiya Shadike, Shanghai Jiao Tong University Dietmar Siche, Leibniz Institut für Kristallzüchtung, Berlin Karuppannan Srinivasan, Bharathiar University, Coimbatore John S. Walker, University of Illinois at Urbana-Champaign, IL Jiayue Xu, Shanghai Institute of Technology, Shanghai Wenkun Zhu, Southwest University of Science and Technology, Mianyang Editor-in-Chief: Marc Zastrow
               
Click one of the above tabs to view related content.