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Theoretical study on the optoelectronic properties of GaAs nanostructures with Al component gradient change

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In order to improve the photoemission characteristics of the GaAs photocathode, GaAs nanostructures (nanoholes and nanowires) with three sublayers and Al component of gradient distribution are designed in this article.… Click to show full abstract

In order to improve the photoemission characteristics of the GaAs photocathode, GaAs nanostructures (nanoholes and nanowires) with three sublayers and Al component of gradient distribution are designed in this article. Finite element method was used to study the effects of Al component gradient interval, component range, height, diameter, and other parameters on light absorption of nanostructures. And the quantum efficiency of these nanostructures was calculated. The results show that the wide band absorption can be achieved with small gradient interval and component variation range, and the nanostructure can enhance the light capture ability with certain angle inclination. In the gradient component nanostructures, the thickness of the top most layer has a great influence on the quantum efficiency.

Keywords: theoretical study; gaas nanostructures; component gradient; study optoelectronic

Journal Title: International Journal of Energy Research
Year Published: 2020

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