LAUSR

In this modern era, energy devices have become an important part of our daily life. Various types of energy conversion devices have been developed to meet the current energy demands. Semiconductor anode (CdZnO) has been synthesized by the sol‐gel method and lattice constants and the band gap results have been compared experimentally and theoretically. XRD results show that Cd‐doped ZnO shifts the peaks toward the lower angles, increases the lattice parameters, and decreases the crystallite size (48 nm). Microstructure of Cd‐doped ZnO shows the agglomerations of particles, found in the shape of cubes, hexagons, and dumbbell shapes with diameter in the range of 2–7 µm. The experimentally obtained conductivity of CdZnO is 0.142 S/cm at 550°C. The electrochemical impedance spectroscopy shows the decreased resistance with an increase in temperature. The doped system shows a maximum open circuit voltage of 0.95 V and performance of 0.52 W/cm2 at 550°C.