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Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis

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IHP–Leibniz-Institut für innovative Mikroelektronik, Material ResearchSemiconductor Optoelectronics, Frankfurt (Oder), Germany Dipartimento di Fisica, Università di Pisa, Pisa, Italy Institut für Wissenschaftliches Rechnen, Technische Universität Dresden, Dresden, Germany Dresden Center for… Click to show full abstract

IHP–Leibniz-Institut für innovative Mikroelektronik, Material ResearchSemiconductor Optoelectronics, Frankfurt (Oder), Germany Dipartimento di Fisica, Università di Pisa, Pisa, Italy Institut für Wissenschaftliches Rechnen, Technische Universität Dresden, Dresden, Germany Dresden Center for Computational Material Science, Technische Universität Dresden, Dresden, Germany Dipartimento di Scienze, Università degli Studi Roma Tre, Roma, Italy

Keywords: phonon coefficient; dependence strain; coefficient epitaxial; temperature dependence; strain phonon; epitaxial 001

Journal Title: Journal of Raman Spectroscopy
Year Published: 2020

Link to full text (if available)


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