ReS2 thin layers exhibit polarization‐dependent Raman behaviors owing to anisotropic electron–phonon interaction. Herein, we observed anomalous Raman polarization behaviors of ReS2 flakes prepared on Au thin films. In the angle‐resolved… Click to show full abstract
ReS2 thin layers exhibit polarization‐dependent Raman behaviors owing to anisotropic electron–phonon interaction. Herein, we observed anomalous Raman polarization behaviors of ReS2 flakes prepared on Au thin films. In the angle‐resolved polarization Raman spectroscopy (ARPRS) measurement, the intensity polarization plots of different Raman modes of the ReS2 flakes prepared on gold thin film rotate by certain angles compared with those of the same flake prepared on SiO2. In particular, such rotation depends strongly on the flake thickness and the excitation laser wavelengths. The maximum rotation angles can be 14.8° for the mode of the 3L and 40° for the mode of the 7L, respectively. Such observations greatly enrich the anisotropic optical behaviors of ReS2, which may facilitate the design of future anisotropic optoelectronic devices.
               
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