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Strong and narrowband terahertz (THz) radiation is obtained from a GaAs‐based pseudomorphic high‐electron‐mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized.… Click to show full abstract
Strong and narrowband terahertz (THz) radiation is obtained from a GaAs‐based pseudomorphic high‐electron‐mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized. The maximum emission power is measured to be 63 and 278 μW at room temperature and 77 K, respectively. By using the THz radiation from the pHEMT, a metal object hidden in cloth was successfully imaged.
Keywords:
phemt;
strong narrowband;
terahertz;
radiation;
narrowband terahertz;
gaas based
Journal Title: Microwave and Optical Technology Letters
Year Published: 2020
Link to full text (if available)
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Journal Title: Microwave and Optical Technology Letters
Year Published: 2020
Link to full text (if available)
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recommendations!