Photo from wikipedia
During high‐electron‐mobility transistor elaboration process, a thermal treatment of In0.2Al0.8N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In0.2Al0.8N/GaN heterostructures, annealed at 850°C… Click to show full abstract
During high‐electron‐mobility transistor elaboration process, a thermal treatment of In0.2Al0.8N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In0.2Al0.8N/GaN heterostructures, annealed at 850°C under O2 partial pressure, present a specific in‐depth organization. Angle‐resolved X‐ray photoelectron spectroscopy is a powerful tool to precisely determine the spatial localization and relative position of the different interfaces, from InAlN until buried GaN layer. The proposed in‐depth model of the stack evidences (1) an Al‐rich surface oxide with embedded N2 molecules, (2) an interlayer of InAlN<1 governed by nitrogen lattice defects, (3) a stable In0.2Al0.8N matrix, and finally (4) the GaN buffer layer underneath.
Journal Title: Surface and Interface Analysis
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!