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In this paper an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is proposed. In order to mitigate different short channel effects, workfunction engineering technique is applied to the gate… Click to show full abstract
In this paper an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is proposed. In order to mitigate different short channel effects, workfunction engineering technique is applied to the gate electrode. An analytical model for channel potential, electric field threshold voltage and drain current is developed for the device and validated with Atlas TCAD simulation results. The variation of minimum channel potential and threshold voltage with respect to different channel lengths is also performed. It is observed that device with triple material gate shows better control of short channel effects as compared to single and double material gate based devices.
Journal Title: Microsystem Technologies
Year Published: 2019
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