Photo from wikipedia
Differential conductance and transconductance of double-gate MOSFET are analytically computed in presence of high-K dielectric following Ortiz-Conde model. Poisson’s equation and carrier continuity equation are simultaneously solved incorporating the effect… Click to show full abstract
Differential conductance and transconductance of double-gate MOSFET are analytically computed in presence of high-K dielectric following Ortiz-Conde model. Poisson’s equation and carrier continuity equation are simultaneously solved incorporating the effect of back-gate, and independent-gate model is considered for electrical characterization. Percentage change of conductance and transconductance are calculated, and results are compared with published literature. Effect of high-K dielectric is analyzed with that obtained for conventional SiO2 materials where comparison is taking place with identical bias and structural parameters. Saturation of transconductance is obtained for high-K dielectrics for higher VGS and lower VDS, indicating the subthreshold condition. Pinch-off condition is also evaluated from the plot of differential conductance. Results are extremely useful for utilizing the device for analog and digital circuits with nano-device.
Journal Title: Microsystem Technologies
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!