LAUSR

A 10 nm Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) are presented in this paper. A channel length of 24.6 nm and an optimized threshold voltage of 0.40961 v at drain voltage of 0.005 v are accomplished in this paper. The CMOS is considered using the 10 nm MOSFET and the improved characteristics of the device have been showcased. Indium Gallium Arsenide (In 0.53 Ga 0.47 As) is passed down as semiconductor material and Hafnium Oxide (HfO 2 ) as oxide layer representative in the both n and p type10nm MOSFET. The Observation regarding the electrical features of the device has been carried out. The parameters which are taken for the observation are supplied gate voltage (V GS ), Drain to Source Voltage(V DS ), Threshold Voltage(V TH ) and Drain Current(I D ). The study regarding the device electrical characteristics has revealed that, it is working at an minimal threshold voltage (V TH ) 0.40961v, drive current (I ON ) of 21.945 × 10 −6 A um −1 , and leakage current (I OFF ) of 14.853 × 10 −11 A um −1 .