LAUSR

Biomedical applications such as body area networks (BANs) require the design of power-efficient SRAM cells for the extended battery lives of BAN sensor nodes. In this work, we have proposed a bit-interleaving supporting, robust, low-power single-ended 9T (SE9T) bitcell. Design metrics of our bitcell are compared with several bitcells such as the 7T, FD8T and SEDF9T cells for their comparative analysis. The proposed cell shows 2.87×/3.36× higher RSNM than that of 7T/FD8T and 1.05×/1.5×/7.0× higher WSNM than that of 7T/FD8T/SEDF9T, 1.15×/1.06× and 1.54×/1.38× lower distribution in T RA and I READ , respectively, compared to 7T/FD8T. In addition, the proposed cell shows 1.15×/1.22× shorter T WA when compared to SEDF9T/7T. Furthermore, SE9T cell consumes 10.80×/17.81× lower write power than that of SEDF9T/FD8T and 1.52×/18.37× lower read power than that of 7T/FD8T. It also exhibits 1.04×/2.92× lower leakage power dissipation than that of FD8T/7T. All these developments are obtained at a cost of 2.5× longer T WA , 1.73×/1.73× longer T RA when compared to FD8T and 7T/FD8T, and 1.64×/1.06× higher write power/read power than 7T/SEDF9T @ V DD  = 700 mV.