LAUSR

AbstractStudies of hydrogen sulfide (H2S) and ammonia (NH3) adsorption on phosphorus (P) and silicon (Si) doped graphene are performed by ab initio calculations using the periodic density functional theory (DFT). The P and Si incorporation in graphene distorts the unit cell altering the bond lengths and angles. Unlike the pristine, the phosphorus-doped graphene shows a metallic behavior, and the silicon-doped graphene is a semiconductor with an energy gap of 0.25 eV. Moreover, the electronic properties of phosphorus-doped graphene may change with the adsorption of hydrogen sulfide and ammonia. However, the silicon-doped graphene only shows changes with the adsorption of hydrogen sulfide. In addition, the silicon-doped graphene exhibits chemisorption when interacting with ammonia. According to the obtained results, phosphorus-doped graphene is suitable as a gas sensor of hydrogen sulfide and ammonia, in contrast with the silicon-doped structure, which may be used as a sensor of hydrogen sulfide. Graphical AbstractAmmonia adsorption on Si-doped graphene