In this paper, a low-complexity resistorless high-precision sub-1 V MOSFET-only voltage reference is presented. To obtain an accurate output, a curvature-compensation technique is used, canceling its logarithmic temperature dependence regardless… Click to show full abstract
In this paper, a low-complexity resistorless high-precision sub-1 V MOSFET-only voltage reference is presented. To obtain an accurate output, a curvature-compensation technique is used, canceling its logarithmic temperature dependence regardless of the value of the mobility temperature exponent $$(\gamma )$$ . The circuit is realized in 65 nm CMOS technology and yields an output voltage of 574 mV, a temperature coefficient of 3.5 $$\frac{{{\text{ppm}}}}{{^\circ {\text{C}}}}$$ in the range of − 50 to 150 °C, a power supply rejection ratio (PSRR) of − 103 dB at 100 Hz, a line sensitivity of $$6\,\frac{{\upmu {\text{V}}}}{{\text{V}}}$$ in the supply voltage range of 1.3–3 V, a power dissipation of 650nW at 1.3 V supply, and an output noise of 1.7 $${\mu V}/\sqrt {{\text{Hz}}}$$ at 100 Hz. The total active area of the design is 0.03 mm2. This voltage reference is suitable for low-power low-voltage applications which also require high precision.
               
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