LAUSR

In this paper, an analytical model has been presented to study the influence of magnetic field on the impact ionization rate of charge carriers in semiconductors. The magnetic field is supposed to be applied along the oblique direction with respect to the direction of applied electric field. Numerical calculations have been carried out by using the comprehensive analytic expression of ionization rate of charge carriers formulated by the authors, in order to study the effect of oblique magnetic field on the ionization rate of electrons and holes moving under a steady electric field in 4H-SiC. Results show that the application of nonzero steady magnetic field in oblique direction leads to significant reduction in ionization rates. Moreover, the above-mentioned magnetic field-induced reduction in ionization rates is found to be maximum when the steady magnetic field is applied along the normal direction with respect to the external electric field.