LAUSR

This article proposes a novel device structure of electrically doped tunnel FET with drain/gate work function engineering by using hetero-dielectric material for the suppression of ambipolar behavior with improved DC and RF characteristics. For this, a P–I–N type structure was formed over an intrinsic silicon wafer by applying negative and positive voltages to create source and drain regions, respectively. Formation of source and drain regions by the concept of electrical doping is useful for reduction of random doping fluctuations and fabrication complexity. For suppression of ambipolar behaviour, the drain electrode is split into two different metal work functions ($$\phi _\mathrm{DE1}$$ϕDE1 < $$\phi _\mathrm{DE2}$$ϕDE2), which alters the carrier concentration and increases the tunneling barrier at the drain/channel interface. Consequently, the proposed modification in terms of dual work functionality at the drain terminal offers better performance in terms of suppression of negative conductance (ambipolar current) and parasitic capacitances. However, the presence of dual work functionality at the drain electrode causes degradation in ON-state current and RF figures of merit. To resolve these problems, the control gate electrode is further split into two different work functions and uses hetero gate dielectric material, where the gate work function near the source/channel interface is greater than the gate work function near the drain/channel interface. It assists tunneling of carriers at the source/channel junction and improves ON-state current with RF performance. Apart from this, the use of hetero gate dielectric material provides further enhancement in DC and high frequency behaviour of the device.