LAUSR

Resistive random access memory (RRAM) technology promises superior performance and scalability while employing well-developed fabrication processes. Conductance in insulating oxides employed in RRAM devices can be strongly affected by atomic-level changes that makes cell switching properties extremely sensitive to operation conditions inducing local structural modifications. This opens an opportunity to condition the memory cell stack by forming a conductive filament capable of high frequency, low energy switching. Certain materials with pre-existing conductive paths, in particular some polycrystalline oxides, like hafnia, are shown to respond well to this approach. For this class of materials, the concept of ultra-fast pulse technique as an ultimate method for assessing RRAM switching capabilities in circuitry operations is discussed. Hafnia-based cells demonstrate compliance-free (1R) forming with no current overshoot, low operation currents, and reduced variability.