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A novel, vertical single-diffused metal–oxide–semiconductor (VSDMOS) structure is proposed by applying workfunction engineering to a vertical power metal–oxide–semiconductor field-effect transistor (MOSFET) with source and drain regions formed using the charge… Click to show full abstract
A novel, vertical single-diffused metal–oxide–semiconductor (VSDMOS) structure is proposed by applying workfunction engineering to a vertical power metal–oxide–semiconductor field-effect transistor (MOSFET) with source and drain regions formed using the charge plasma concept. Electron and hole plasma was induced by employing hafnium and platinum metal. Furthermore, the electrical characteristics of the proposed VSDMOS were compared with those of conventional vertical double-diffused metal–oxide–semiconductor devices, revealing that the proposed VSDMOS exhibits a 14 % increase in current driving capability, with improved breakdown voltage.
Journal Title: Journal of Computational Electronics
Year Published: 2018
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