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Meshfree analysis of high-frequency field-effect transistors: distributed modeling approach

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Time-domain analysis of high-frequency field-effect transistors is presented using the meshfree radial point interpolation method. The distributed modeling approach is followed in the linear and nonlinear regimes. The corresponding matrix… Click to show full abstract

Time-domain analysis of high-frequency field-effect transistors is presented using the meshfree radial point interpolation method. The distributed modeling approach is followed in the linear and nonlinear regimes. The corresponding matrix Telegrapher’s equation and terminal conditions are discretized using the weighted average method. Conditionally and unconditionally stable schemes are studied. For linear and conditionally stable nonlinear analysis, the leap-frog and Crank–Nicolson methods are used. To provide unconditional stability in the nonlinear regime, a hybrid backward/forward scheme is exploited.

Keywords: high frequency; frequency field; analysis; effect transistors; field effect; analysis high

Journal Title: Journal of Computational Electronics
Year Published: 2018

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