LAUSR

This paper presents an optimum design of an ultra-wideband (UWB) 2.5–10.5-GHz low-noise amplifier (LNA) in 180-nm and 65-nm radiofrequency (RF)-complementary metal–oxide–semiconductor (CMOS) technology. A novel input matching network employing resistive–inductive feedback and a noise-canceling technique is proposed to achieve broadband matching as well as a low noise figure (NF). Moreover, a current-reused structure and the inductive peaking technique are applied in the proposed LNA to reduce its power consumption and provide high, flat gain. The proposed UWB-LNA is optimized using heuristic multiobjective optimization based on inclined planes system optimization (IPO) and particle swarm optimization (PSO) as simulation-based evolutionary techniques. The proposed UWB-LNA is designed and simulated using HSPICE and Cadence Spectre RF. The postlayout simulation results show an input return loss ( S 11 ) of less than −10 dB, a flat power gain ( S 21 ) of 13.2 ± 0.5 and 14 ± 0.5 dB, and an NF below 5 and 2.5 dB over the whole UWB band when implemented in 180-nm and 65-nm CMOS technology, respectively. The UWB-LNA consumes 7.2 and 9.5 mW from a 1.8-V power supply when implemented in 180-nm and 65-nm CMOS technology, respectively.