LAUSR

The influences of temperature, electric field, and frequency on the internal bias field Ei have been investigated in poled and aged Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.42Pb(Mg1/3Nb2/3)O3–0.34PbTiO3 ferroelectric ceramic. It was found that Ei decreases with temperature T and electric field amplitude E0, but increases with frequency f. The relaxation behavior of the internal bias field is related to the redistribution of preferentially oriented defect dipoles. Based on our results, scaling relations of Ei on temperature, electric field, and frequency were established in both rhombohedral and tetragonal phases, which provide the foundation for making “harder” piezoelectric materials through point defect engineering in order to meet the demand of high-power piezoelectric device applications.