LAUSR

In wide-bandgap semiconductor power device packaging, die bonding refers to attaching the die to substrate. Thereby, the process temperature of Ag sintering for the die bonding should be low to prevent damage to fragile dies. Herein, an organic-free strategy using Ag nanostructures derived from the thermal decomposition of metal–organic decomposition (MOD) was proposed to achieve low-temperature bonding. Significant effects on bonding performance were determined by the thermal decomposition temperature, which in turn determined the organic content and sintering degree of Ag nanostructures. At a low thermal decomposition temperature of 160 °C, incomplete decomposition resulted in high organic content in the Ag nanostructures, causing large pores inside the Ag joints owing to the generation of gaseous products. Owing to the Ag particles with naked surfaces and wide size distribution, the Ag nanostructure obtained at 180 °C showed an excellent bonding performance, resulting in a high shear strength of 31.1 MPa at a low bonding temperature of 160 °C. As the thermal decomposition temperature was 200 °C, sintering among Ag particles increased the particle size, resulting in a reduction of surface energy and driving force for sintering. We think that uncovering this underlying mechanism responsible for the bonding performance will promote the application of Ag MOD in the die bonding of WBG power devices.