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Effects of dopant distribution improvement on optical and scintillation properties for Ce-doped garnet-type single crystals

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Ce-doped garnet-type single crystals with improved dopant distribution were grown by the micro-pulling-down method using a modified Iridium crucible and effects of dopant distribution improvement on the optical and scintillation… Click to show full abstract

Ce-doped garnet-type single crystals with improved dopant distribution were grown by the micro-pulling-down method using a modified Iridium crucible and effects of dopant distribution improvement on the optical and scintillation properties were investigated. Ce-doped Y3Al5O12 (Ce:YAG) and Gd3(Ga,Al)5O12 (Ce:GGAG) single crystals with improved dopant distribution could be grown by a Iridium crucible with five capillaries (5C). The Ce:YAG and Ce:GGAG single crystals (5C) showed higher transmittance than the single crystals grown by an original Iridium crucible with one capillary (1C). In addition, a clear photo-peak could be observed in the pulse-height spectrum of the Ce:YAG single crystal (5C) under γ-ray irradiation while there was no peak in the spectrum of the Ce:YAG single crystal (1C).

Keywords: dopant distribution; doped garnet; single crystals; garnet type; type single

Journal Title: Journal of Materials Science: Materials in Electronics
Year Published: 2017

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