Photo from archive.org
In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which… Click to show full abstract
In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. The structural properties of the produced films were examined by XRD and SEM analyses. Besides, Al/VOx/p-Si metal-oxide-semiconductor (MOS) structure was obtained by the same synthesis method. Doping densities of these MOS structures were calculated from frequency dependent capacitance–voltage measurements. It was determined that the interface states which were assigned with the help of these parameters vary according to frequency.
Journal Title: Journal of Materials Science: Materials in Electronics
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!