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In this paper, CuSbS2 thin films were prepared by a facile and environmental-friendly chemical solution method at low temperature. The effect of sulfurization temperature was studied. The properties of CuSbS2… Click to show full abstract
In this paper, CuSbS2 thin films were prepared by a facile and environmental-friendly chemical solution method at low temperature. The effect of sulfurization temperature was studied. The properties of CuSbS2 thin films were investigated by X-ray diffraction, scanning electron microscopy, UV–Vis and photocurrent response measurement. The results indicated CuSbS2 thin films sulfurized at 350 °C showed better crystallinity and no impurity phase. The as-prepared CuSbS2 film had a band gap of 1.5 eV and an obvious photoconductivity.
Journal Title: Journal of Materials Science: Materials in Electronics
Year Published: 2017
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