LAUSR

Manganese-doped zinc oxide thin films (ZnO:Mn) were grown on silicon and corning glass using double beam pulsed laser deposition. In this configuration, two synchronized pulsed-laser beams were employed to ablate independently ZnO and Mn targets. The presence of the zinc blende phase was investigated by means of X-ray diffraction, pulsed laser photoacoustic analysis and the calculation of the lattice parameter a. The crystallography plane (110) of the cubic zinc blende was found in all the films. Energy dispersive X-ray spectroscopy and different statistical analysis were employed to analyze the effect of the relative delay between plasma plumes on the average incorporation of Manganese. The minimum content of Mn—0.176 at%—was found for a relative delay of 10 µs, this result suggest that this delay is the inflection point to be considered in relation to a significant decrease in the incorporation of the dopant element. A significant positive Correlation analysis—r (4) = 0.98, p < 0.05—between the thickness and the average Mn incorporation was found, this means that as the percentage of manganese in the structure increases the thickness also increases.