Photo from wikipedia
The Ag modified transparent Cu2O/ZnO p–n junction films were prepared by a simple magnetron sputtering process. The transparence and photoelectric conversion of these devices were investigated, which exhibited an obvious… Click to show full abstract
The Ag modified transparent Cu2O/ZnO p–n junction films were prepared by a simple magnetron sputtering process. The transparence and photoelectric conversion of these devices were investigated, which exhibited an obvious photoelectric conversion enhancement (PCE of 0.48%, ten times) than those of the unmodified heterojunction. Through analysis, the enhancement of the photoelectric conversion could be attributed to the remarkable Cu2O/ZnO p–n junction and Ag0 nanoparticles with the performances of photoelectron donor and surface enhanced plasmonic absorption.
Journal Title: Journal of Materials Science: Materials in Electronics
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!