LAUSR

Abstract(100)-oriented epitaxial relaxor ferroelectric 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-0.3PT) thin film was prepared on SrRuO3-buffered SrTiO3 single-crystal substrate by pulsed laser deposition. The phase and domain structure, ferroelectric and piezoelectric properties, and leakage current behavior were studied. Results indicated well saturated polarization-versus-electric field hysteresis loops with large remnant polarization of 30 µC/cm2 and coercive field of 11 kV/mm was obtained. The analysis on the leakage current behavior proposed that linear ohmic conduction and Fowler–Nordheim tunneling were the dominant mechanism for the electric field amplitude below and above 15 kV/mm, respectively. Furthermore, the epitaxial PMN-0.3PT thin film exhibited excellent local piezoelectric response and in situ electric-field-induced domain switching behavior. These results suggest the potential applications of the present epitaxial PMN-0.3PT film in integrated ferroelectric devices.