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In this article, we report the photovoltaic performance of MAPbI3 perovskite using inorganic hole transport materials such as CuI and CuSCN. Structural, optical and morphological investigations were carried out by… Click to show full abstract
In this article, we report the photovoltaic performance of MAPbI3 perovskite using inorganic hole transport materials such as CuI and CuSCN. Structural, optical and morphological investigations were carried out by X-ray diffraction, X-ray photoelectron spectroscopy, UV–visible absorption and scanning electron microscopy. Two different architectures such as mesoscopic (FTO/TiO2/MAPbI3/CuSCN/Au) and inverted (ITO/CuI/MAPbI3/PCBM/Ag) structures were used. The devices displayed (cell area of 0.25 cm2) a short-circuit current density (Jsc) of 16.82 mA/cm2, open-circuit voltage (Voc) of 0.89 V, fill factor of 61.4%, and a PCE of 9.2%. Under similar conditions, the device with CuI shows a PCE of 3.4%, with a decrease in the Jsc (12.30 mA/cm2), fill factor (47.20%) and Voc (0.57 V). The variations of the device performance have been discussed in detail.
Journal Title: Journal of Materials Science: Materials in Electronics
Year Published: 2018
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