LAUSR

The InP/ZnS quantum dots were employed to modify the gate area of AlGaAs/InGaAs high electron mobility transistor. The charge distribution state in the quantum dots would affect the surface potential of the high electron mobility transistor, which result is a variation of drain–source current. Such a quantum dots-high electron mobility transistor hybrid device could transfer the sensing ability of quantum dots to high electron mobility transistor, which overcomes several disadvantages of quantum dot sensors. In this study, this transfer of quantum dots sensing ability to high electron mobility transistor was confirmed by an optical configuration, the photon above 2.3 eV caused a significant drain–source current increment. Furthermore, the theoretical analysis of the electron transition in quantum dots-high electron mobility transistor was made.