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Bias voltage effect on the dielectric properties of organic–inorganic blend SiNWs elaborated via metal assisted chemical etching

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The electrical proprieties of poly (3-hexylthiophene): Silicon nanowires (P3HT: SiNWs) nanocomposite was investigated by impedance spectroscopy technique. The effect of bias voltage under and without illumination was discussed. Indeed, the… Click to show full abstract

The electrical proprieties of poly (3-hexylthiophene): Silicon nanowires (P3HT: SiNWs) nanocomposite was investigated by impedance spectroscopy technique. The effect of bias voltage under and without illumination was discussed. Indeed, the imaginary part of the impedance shows a high relaxation frequency related to Maxwell–Wagner–Sillars (MWS) polarization. The relaxation time was found in the range of ms and it was shifted towards high frequency with increasing the bias voltage especially at 0.6 V At bias voltage equal to Vth and under illumination, the conductivity increases because the trapped charges acquire the necessary energy to escape from the interface and the hopping time found was reduced. This indicates a change of the conduction mechanism. The Cole–Cole diagram was excellently fitted through an equivalent circuit including a chemical capacitance Cµ, a contact electrical resistance Rs and recombination resistance Rp.

Keywords: voltage; bias voltage; dielectric properties; voltage effect; effect dielectric

Journal Title: Journal of Materials Science: Materials in Electronics
Year Published: 2018

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