LAUSR

The quality of the contact is key for the performance enhancement of the MoS2 device. As the oxygen plasma treatment is developed in the fabrication of MoS2 field effect transistor (FET), we demonstrate that the tunneling layer (MoO3) is formed on the top of the MoS2 contact region and the process induced organic residues in the source and drain regions is effectively removed. The formation of MoO3 can degrade the Fermi level pinning effect at the MoS2/metal interface and lowering the Schottky barrier height. And the flatness of the interface has been greatly improved, with the roughness reduced from 0.53 to 0.166 nm. In this paper, we improve the device performance with an on-/off-current ratio increase by four orders of magnitude, a mobility increase by 10 times at room temperature and the 33-fold decrease in contact resistance. This research shows that oxygen plasma treatment is a promising method for the integration of MoS2 FET in the future.