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Packing fraction, bond valence and crystal structure of AVO4 (A = Eu, Y) microwave dielectric ceramics with low permittivity

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The A3+B5+O4 binary oxides have a variety of different structures—monoclinic, and tetragonal—making them suitable candidates for laser hosts, energy storage, microwave dielectric substrates, etc. In this work, we prepared two… Click to show full abstract

The A3+B5+O4 binary oxides have a variety of different structures—monoclinic, and tetragonal—making them suitable candidates for laser hosts, energy storage, microwave dielectric substrates, etc. In this work, we prepared two tetragonal AVO4 (A = Eu, Y) ceramics with zircon structure. The powder X-ray diffraction (XRD) has been used to study phase purity of the zircon-type AVO4 (A = Eu, Y) ceramics. There was a significant correlation between microwave dielectric properties and relative density. Dense EuVO4 and YVO4 ceramics sintered at 1180 °C and 1240 °C exhibited promising microwave dielectric properties with εr = 11.6 and 9.9, Q × f = 46,862 GHz and 56,174 GHz, τf = − 49.6 ppm/°C and − 43.7 ppm/°C, respectively. In addition, the relationship between microwave dielectric properties and crystal structure of AVO4 (A = Eu, Y) ceramics were discussed by packing fraction and bond valence theory in detail.

Keywords: crystal structure; avo4; structure avo4; packing fraction; microwave dielectric

Journal Title: Journal of Materials Science: Materials in Electronics
Year Published: 2020

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