Photo from archive.org
Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation… Click to show full abstract
Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with the decrease of the pulse duration. The impact ionization threshold field is found to depend linearly on frequency for the fields oscillating at frequencies much higher than reciprocal momentum relaxation time. Good agreement between calculations and available experimental data has been obtained.
Journal Title: Optical and Quantum Electronics
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!