Local failure in the InSb infrared detector arrays (InSb IDAs) is chiefly triggered by the local shear stress, the peeling stress, and the tensile stress in the InSb IDAs. Thus,… Click to show full abstract
Local failure in the InSb infrared detector arrays (InSb IDAs) is chiefly triggered by the local shear stress, the peeling stress, and the tensile stress in the InSb IDAs. Thus, these three stress components are utilized to assess the rationality of the current assembly procedure of the InSb IDAs in this paper, which is described as follows: firstly, performing liquid nitrogen shocking tests on the fabricated InSb IDAs, provided that no local failure phenomena occur in the InSb IDAs, then the balanced composite structure (BCS) is glued with the bottom surface of the InSb IDAs to accomplish the fabrication of the InSb IDAs assembly. We ascertain that the tensile stress in the center region of the InSb substrate declines slightly with the attached BCS, at the same time, both the interfacial shear stress and the peeling stress maintain unchanged at the locations where the local delamination most likely appears. These non-increased stress distribution characteristics with the added BCS confirmed that the current assembly procedure of the InSb IDAs is reasonable, and the glued BCS does not increase the failure probability of the InSb IDAs assembly.
               
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