Tin (IV) oxide, SnO2 films have been successfully synthesized in argon gas using a magnetron sputtering device. The morphology, structure, optical, photoluminescence, and photoresponse features of the samples have been… Click to show full abstract
Tin (IV) oxide, SnO2 films have been successfully synthesized in argon gas using a magnetron sputtering device. The morphology, structure, optical, photoluminescence, and photoresponse features of the samples have been analyzed via field electron scanning electron microscope, X-ray diffractograms, UV–Vis spectrometer, and spectro fluorophotometer. Compact nano grained morphologies with tetragonal structure and high absorbance were obtained. Increasing the annealing temperature led to a slight rise in the bandgap energies of the deposited samples. SnO2 films exhibited good photoluminescence features with increasing photoresponse with time as the annealing temperature reduced. The films can be potentially applied to optical and solar cell devices.
               
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