LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

GaN-based bipolar cascade lasers with 25 nm wide quantum wells

Photo from wikipedia

In good agreement with measurements, self-consistent numerical simulations are utilized to analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated… Click to show full abstract

In good agreement with measurements, self-consistent numerical simulations are utilized to analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide InGaN quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quantum levels. However, internal absorption, low p-cladding conductivity, and self-heating are shown to strongly limit the laser performance.

Keywords: quantum wells; gan based; bipolar cascade; quantum; cascade lasers; based bipolar

Journal Title: Optical and Quantum Electronics
Year Published: 2022

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.