LAUSR

Thermodynamic modeling of the process of chemical vapor deposition (CVD) of SiCx and SiCxNy films from the gas phase was carried out using organosilicon compounds (EtN(SiMe3)2, PhN(SiMe3)2, and PhSiMe3) at reactor pressures of 0.01 and 10 Torr in the temperature range of 500–1200 K. It was established that regions of existence of two phase complexes, namely, SiC + Si3N4 + C and SiC + C, were present on the CVD diagrams calculated for the EtN(SiMe3)2—He and PhN(SiMe3)2—He systems. The CVD diagrams calculated for the EtN(SiMe3)2—NH3, PhN(SiMe3)2—NH3, and PhSiMe3—NH3 systems have regions of existence of three phase complexes, namely, Si3N4 + C, SiC + Si3N4 + C, and SiC + C. The composition of the obtained silicon-containing films was calculated.