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The influence of high-temperature annealing of electrochemically deposited Cu-Zn-Sn layers on the composition and structure of kesterite films — absorbing layers of solar cells

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Cu1−δZn2−xSnxS4 (CZTS) films were prepared by sequential electrochemical deposition on different supports (Ta, Ti, Mo, and glass—Mo). The samples obtained using preliminary annealing in inert nitrogen atmosphere contained a secondary… Click to show full abstract

Cu1−δZn2−xSnxS4 (CZTS) films were prepared by sequential electrochemical deposition on different supports (Ta, Ti, Mo, and glass—Mo). The samples obtained using preliminary annealing in inert nitrogen atmosphere contained a secondary intermetallic phase Cu6Sn5 that did not disappear upon subsequent annealing in reactive sulfur atmosphere at 550 °C for 30 min. The CZTS films prepared without preliminary annealing in inert nitrogen atmosphere contained a minimum amount of secondary phases after the sulfurization step. The samples prepared were characterized by a photovoltaically suitable band gap of 1.5 eV and p-type conductivity.

Keywords: deposited layers; high temperature; temperature annealing; influence high; electrochemically deposited; annealing electrochemically

Journal Title: Russian Chemical Bulletin
Year Published: 2019

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